Seminar: Electrical Interfacing of Cells with Graphene Field Effect Transistors
Jose A. Garrido
Walter Schottky Institut
Technische Universität München, Germany
When: Friday, December 2, 2011
Where: Grier Room A, 34-401A
Time: 10:00AM-11:00AM
The seminar was recorded and can be found here.
The development of the future generation of neuroprostheses will require the advancement of novel solid-state sensors with a further improvement in the signal detection capability, a superior stability in biological environments, and a more suitable compatibility with living tissue. Due to the maturity of Si technology, Si-based MOSFETs have been extensively used in previous decades for these applications. However, several disadvantages associated to this technology have motivated the search for more suitable materials. In this respect, the outstanding electronic and electrochemical performance of graphene holds great potential.
In this talk, I will discuss our work towards the development of a graphene-based platform for applications in bioelectronics. In particular, I will report on arrays of graphene solution-gated field effect transistors (G-SGFETs) which can enable an electrical synapse with electrogenic cells. Graphene SGFETs will be assessed based on their sensitivity and low-frequency noise performance. After discussing the biocompatibility of graphene, the ability of graphene SGFETs to transduce the electrical activity of living cells will be discussed.
JOSE A. GARRIDO received a PhD degree in engineering from the Technical University of Madrid in 2000. From 2001 to 2004, he was a Postdoc at the Walter Schottky Institut, Technische Universität München (TUM). He obtained his habilitation in experimental physics in 2010. Since 2011, Jose A. Garrido holds a privat dozent position at the Physics Department of the TUM. Among others, his current scientific interests include the use of carbon-based functional materials, such as diamond, graphene, and organic semiconductors for applications in biosensing and bioelectronics.
